BOISE, Idaho--(BUSINESS WIRE)--May 25, 2005-- Unique megasonics configuration, dilute chemistries and short process times all contribute to damage-free cleaning with minimal film loss
SCP Global Technologies (SCP), a leading supplier of semiconductor capital equipment, announced recent results of customer evaluation programs showing consistent process results on a variety of device types. The data showed greater than 95% particle removal efficiency (PRE) without damage to 65nm poly Si gate structures.
The push to 65nm-and-beyond technology nodes has revealed surface preparation issues critical to process integration. Debate at the forefront of these issues addresses whether megasonic cleaning remains practical for particle removal on delicate structures. Data generated by SCP customer evaluation programs and results from process demonstrations clearly indicate that megasonics can be effective when properly used.
PRE tests were conducted using a 30 second dilute SC1 process on aged Si3N4 challenge wafers deposited by wet adsorption. The resulting data exhibited a well-defined process window where greater than 95% PRE values are realized without damage to 65nm gate poly-Si structures with an oxide loss of less than 0.3 angstrom. This was achieved using targeted triple beam megasonics at very low power levels. Data summarizing the effect of configuration and total power on the PRE showed that the configuration of the transducers is more important than the total power applied.
The Emersion(TM) is a single-wafer processor that utilizes a vertical immersion process chamber with a unique configuration of three megasonic transducers. Megasonic transducers located at the top of the chamber introduce acoustic wavefronts directed at the wafer/liquid/gas interface (also referred to as the "cleaning zone") while the bottom megasonic transducer prevents the redeposition of removed particles. A key design objective was to take advantage of the exposure of the entire wafer surface, allowing for the application of multiple acoustic wavefronts to the wafer. The combined action of these wavefronts allow for the use of reduced megasonic power levels and lower exposure time, to prevent damage to critical FEOL device structures. The wafer is swept through the "cleaning zone" multiple times with uniform wafer exposure to acoustic wavefronts in the range milliseconds, thereby minimizing damage.
"The high PRE values achieved with the Emersion single wafer cleaning system are due to additional particle removal forces that result from the use of multiple megasonic transducers," said SCP CTO and VP of Technology Eric Hansen. "SCP's unique megasonic configuration allows for high efficiency cleaning without damaging sensitive structures while minimizing the material consumption," added Hansen.
Findings in support of this data will be presented by a major IC manufacturer at SCP Global Technologies' 9 International Symposium on Wafer Cleaning and Surface Preparation, June 8 - 9, 2005, in Boise, Idaho. For more information on the cleaning symposium, visit SCP online at www.scpglobal.com.
About SCP Global Technologies
SCP Global Technologies is a leader in the development of wet processing technology and equipment used in the manufacture of semiconductor wafers. SCP holds patents on single wafer processing technologies as well as on Marangoni(R), GreenDry(R) and GreenDry CI(TM) (Chemical Inject) drying technologies for today's most complex cleaning and drying challenges. The company is committed to being the worldwide leader in surface preparation technology, systems and services to the semiconductor and related industries. Learn more about SCP at www.scpglobal.com.
